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BCR3PM-12L
Triac
Low Power Use
REJ03G0301-0200 Rev.2.00 Nov.08.2004
Features
* * * * IT (RMS) : 3 A VDRM : 600 V IFGTI, IRGTI, IRGT : 20 mA (10 mA)Note5 Viso : 2000 V * Insulated Type * Planar Passivation Type * UL Recognized : Yellow Card No. E223904 File No. E80271
Outline
TO-220F
2
3 1 1 2 3
1. T1 Terminal 2. T2 Terminal 3. Gate Terminal
Applications
Contactless AC switch, light dimmer, electric blanket, control of household equipment such as electric fan, solenoid driver, small motor control, and other general purpose control applications
Maximum Ratings
Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V
Rev.2.00,
Nov.08.2004,
page 1 of 6
BCR3PM-12L
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Viso Ratings 3.0 30 3.7 3 0.3 6 0.5 - 40 to +125 - 40 to +125 2.0 2000 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 107C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case
Electrical Characteristics
Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) Min. -- -- -- -- -- -- -- -- 0.2 -- Typ. -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 20Note5 20Note5 20Note5 -- 4.5 Unit mA V V V V mA mA mA V C/W Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 4.5 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Junction to caseNote3
Gate trigger currentNote2
Gate non-trigger voltage Thermal resistance
(dv/dt)c 5 -- -- V/s Tj = 125C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT 10 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = -1.5 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load)
Supply Voltage
Time (di/dt)c Time Time VD
Main Current Main Voltage (dv/dt)c
Rev.2.00,
Nov.08.2004,
page 2 of 6
BCR3PM-12L
Performance Curves
Maximum On-State Characteristics
102 7 Tj = 25C 5 3 2 101 7 5 3 2 100 7 5 3 2 10
-1
Rated Surge On-State Current
40
Surge On-State Current (A)
35 30 25 20 15 10 5 00 10 23 5 7 10
1
On-State Current (A)
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
23
5 7 10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C)
Gate Characteristics (I, II and III)
102 7 5 3 2 10 7 5 3 2 10 7 5 3 2
0 1
Gate Trigger Current vs. Junction Temperature
103 7 5 3 2
IRGT III Typical Example
Gate Voltage (V)
PGM = 3W PG(AV) = 0.3W VGT IGM = 0.5A
102 I I 7 FGT I, RGT I 5 3 2 10 -60 -40-20 0 20 40 60 80 100 120 140
1
IRGT I IFGT I, IRGT III VGD = 0.2V
10-1 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103
Gate Current (mA)
Junction Temperature (C)
Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C)
Gate Trigger Voltage vs. Junction Temperature
10 7 5 3 2 10 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140
2
Maximum Transient Thermal Impedance Characteristics (Junction to case)
Transient Thermal Impedance (C/W)
102 2 3 5 7103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102
3
Typical Example
Junction Temperature (C)
Conduction Time (Cycles at 60Hz)
Rev.2.00,
Nov.08.2004,
page 3 of 6
BCR3PM-12L
Allowable Case Temperature vs. RMS On-State Current
160
Maximum On-State Power Dissipation On-State Power Dissipation (W)
5.0 4.5 4.0
Case Temperature (C)
140 120 100 Curves apply regardless
of conduction angle
3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 0.5 0 0
360 Conduction
80 60 40
360 Conduction
20 Resistive, 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0
inductive loads
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs. RMS On-State Current
160 160
120 x 120 x t2.3 100 x 100 x t2.3 60 x 60 x t2.3
Allowable Ambient Temperature vs. RMS On-State Current
Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads
Ambient Temperature (C)
120 100 80
Ambient Temperature (C)
140
140 120 100 80 60 40 20 0 0 0.5 1.0
60 All fins are black painted
aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection
0 0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C)
Repetitive Peak Off-State Current vs. Junction Temperature Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C)
105 7 5 3 2 104 7 5 3 2 10 7 5 3 2 10 -60 -40-20 0 20 40 60 80 100 120 140
2 3
Holding Current vs. Junction Temperature
103 7 5 3 2 102 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140
Typical Example
Typical Example
Junction Temperature (C)
Junction Temperature (C)
Rev.2.00,
Nov.08.2004,
page 4 of 6
BCR3PM-12L
Latching Current vs. Junction Temperature
103 7 5 3 2 102 7 5 3 2
1
Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C)
Breakover Voltage vs. Junction Temperature
160
Typical Example
Distribution
140 120 100 80 60 40 20 0 -60 -40-20 0 20 40 60 80 100 120 140
Latching Current (mA)
T2+, G- Typical Example
10 7 5 3 T2+, G+ Typical Example 2 T2-, G- 0 10 -60 -40-20 0 20 40 60 80 100 120 140
Junction Temperature (C)
Junction Temperature (C)
Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs. Rate of Rise of Off-State Voltage
160 140 120 100 80 60 40 20
I Quadrant III Quadrant
Commutation Characteristics
Critical Rate of Rise of Off-State Commutating Voltage (V/s)
Typical Example Tj = 125C
7 5 3 2 10 7 5
1
Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time
Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz
Minimum
III Quadrant
3 Characteristics Value 2 100 70 10
I Quadrant
01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104
23
5 7 101
23
5 7 102
Rate of Rise of Off-State Voltage (V/s)
Rate of Decay of On-State Commutating Current (A/ms)
Gate Trigger Current vs. Gate Current Pulse Width
Gate Trigger Characteristics Test Circuits
6 6
Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC)
10 7 5 3 2 102 7 5 3 2 101 0 10
3
Typical Example IRGT III IRGT I IFGT I
6V V
A
6V
A V
330
330
Test Procedure I
6
Test Procedure II
6V
A V
23
5 7 10
1
23
5 7 10
2
330
Gate Current Pulse Width (s)
Test Procedure III
Rev.2.00,
Nov.08.2004,
page 5 of 6
BCR3PM-12L
Package Dimensions
TO-220F
EIAJ Package Code
Conforms
JEDEC Code
Mass (g) (reference value)
2.0
Lead Material
Cu alloy
10.5 max 5.2 2.8
5.0
1.2 17 3.6 13.5 min
1.3 max 0.8
8.5
3.2 0.2
2.54
2.54
0.5
2.6
4.5
Symbol A A1 A2 b D E e x y y1 ZD ZE
Dimension in Millimeters Min Typ Max
Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order code example BCR3PM-12LA BCR3PM-12LA-A8
Straight type Vinyl sack 100 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A - Lead forming code Note : Please confirm the specification about the shipping in detail.
Rev.2.00,
Nov.08.2004,
page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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